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| Excelics DATA SHEET * * * * * * * NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +18.5dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 180 Min. (All Leads) EFA018A-70 Low Distortion GaAs Power FET 20 D 44 19 4 S S 40 G ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE NF Ga Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=6V, Ids=50% Idss f=12GHz Noise Figure f=12GHz Vds=2V, Ids=15mA Associated Gain f=12GHz Vds=2V, Ids=15mA Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0 mA -10 -6 MIN 16.5 9.0 All Dimensions In mils. TYP 18.5 18.5 10.5 8.0 33 1.1 10.5 MAX UNIT dBm dB % dB dB 25 20 50 30 -2.0 -15 -14 480* 80 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=0.5mA Source Breakdown Voltage Igs=0.5mA Thermal Resistance C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 10V 6V Vds Gate-Source Voltage -6V -4V Vgs Drain Current Idss 40mA Ids Forward Gate Current 4mA 0.7mA Igsf Input Power 17dBm @ 3dB Compression Pin Channel Temperature 175oC 150 oC Tch o Storage Temperature -65/175 C -65/150 oC Tstg Total Power Dissipation 285mW 240mW Pt Note: 1 Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com 70 EFA018A-70 DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS FREQ (GHz) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 --- S11 --MAG ANG 0.992 -15.2 0.973 -31.3 0.948 -47.1 0.927 -62.2 0.896 -76.8 0.862 -89.8 0.824 -103.6 0.785 -116.7 0.745 -137.4 0.712 -157.8 0.685 -167.8 0.659 178.6 0.661 151.4 0.678 126.4 0.668 112.7 0.663 96.6 0.681 77.3 0.716 64.4 0.704 48.0 0.736 30.3 0.799 18.9 0.786 7.3 0.753 -11.7 0.771 -30.9 0.753 -43.1 0.720 -58.4 6V, 1/2 Idss --- S21 ----- S12 --MAG ANG MAG ANG 2.467 164.6 0.013 80.7 2.404 148.7 0.024 66.9 2.307 133.4 0.033 56.3 2.278 119.2 0.040 47.1 2.271 105.4 0.046 38.0 2.217 91.4 0.050 28.7 2.144 77.5 0.050 18.8 2.099 64.5 0.047 8.7 2.141 50.1 0.043 6.9 2.132 34.6 0.041 4.4 2.113 21.5 0.039 4.7 2.119 8.0 0.039 11.3 2.080 -9.0 0.043 10.3 1.968 -26.0 0.047 7.7 1.941 -42.0 0.053 3.2 1.927 -58.8 0.059 -4.7 1.733 -74.2 0.059 -3.2 1.654 -86.1 0.081 -17.9 1.596 -103.7 0.070 -34.8 1.560 -120.9 0.071 -45.7 1.480 -136.6 0.072 -58.3 1.378 -151.5 0.067 -77.2 1.305 -170.3 0.060 -97.4 1.249 169.6 0.055 -120.5 1.245 152.3 0.055 -141.1 1.255 136.8 0.060 -161.3 --- S22 --MAG ANG 0.813 -9.6 0.799 -21.0 0.788 -32.1 0.778 -40.9 0.757 -49.5 0.730 -60.6 0.709 -71.2 0.679 -80.0 0.675 -85.5 0.658 -95.2 0.636 -109.4 0.625 -121.6 0.608 -130.8 0.598 -141.9 0.600 -161.3 0.592 -179.9 0.558 170.3 0.607 158.0 0.622 135.6 0.677 119.0 0.666 107.4 0.676 95.1 0.674 76.0 0.671 57.6 0.655 42.6 0.649 28.8 |
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